PBYR3060PT |
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Part Number | PBYR3060PT |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transie... |
Features |
VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -60 60 60 60 MAX. -80 80 80 80 30 43 30 180 200 -100 100 100 100 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 139 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. square wave; δ = 0.5; Tmb ≤ 124 ˚C
I2t IRRM IRSM Tstg Tj
t = 25 µs; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms... |
Document |
PBYR3060PT Data Sheet
PDF 31.54KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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NXP |
Rectifier diodes Schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes Schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes Schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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NXP |
Rectifier diodes schottky barrier |
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