QSD123 PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSD123 PLASTIC SILICON INFRARED PHOTOTRANSISTOR

The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. FEATURES • NPN Silicon Phototransistor • Package Type: T-1 3/4 • Notched Emitter: QED12X/QED22X/QED23X • Narrow Reception Angle: 24°C • Daylight Filter • Package Material and Color: Black Epoxy •.

Features

• NPN Silicon Phototransistor
• Package Type: T-1 3/4
• Notched Emitter: QED12X/QED22X/QED23X
• Narrow Reception Angle: 24°C
• Daylight Filter
• Package Material and Color: Black Epoxy
• High Sensitivity  2001 Fairchild Semiconductor Corporation DS300361 7/20/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specifi.