Search by part number and manufacturer or description
QM50TB-2H |
|
Click to view a larger image
| Part Number | QM50TB-2H |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current .. 50A VCEX Collector-emitter voltage ... 1... |
| Features |
g Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 50 50 400 3 500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal sc... |
| Document |
 QM50TB-2H Data Sheet
PDF 86.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|
|
|
|
Mitsubishi Electric Semiconductor |
Transistor |
|