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QM20TG-9B |
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| Part Number | QM20TG-9B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TG-9B • • • • IC Collector current .. 20A VCEX Collector-emitter voltage ..... 5... |
| Features |
or reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 450 500 500 7 20 20 100 1 200 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 70 Unit V V V V A A W A A °C °C V N ·m kg ·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q ... |
| Document |
 QM20TG-9B Data Sheet
PDF 73.42KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
Transistor Modules |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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