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MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20KD-HB • • • • • IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card .
r reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Inverter part, Tj=25°C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 83 1 200 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing (Converter part, Tj=25.
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi |
Transistor Modules |
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Mitsubishi Electric Semiconductor |
Transistor Modules |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE NON-INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi |
Transistor Module |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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