Document | DataSheet (78.74KB) |
MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-HK • • • • • IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card .
rent Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500
–40~+150
–40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A °C °C V N
·m kg
·cm N
·m kg
·cm g
—
Mounting torque Mount.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | QM150DY-H |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE | |
2 | QM150DY-H |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE | |
3 | QM150DY-HBK |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE | |
4 | QM150DY-24BK |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE | |
5 | QM150DY-24K |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |