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QM150CY-H |
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| Part Number | QM150CY-H |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H • • • • • IC Collector current 150A VCEX Collector-emitter voltage ..... 60... |
| Features |
ion temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A °C °C V N ·m kg ·cm N ·m kg ·cm g — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts t... |
| Document |
 QM150CY-H Data Sheet
PDF 75.17KB |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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