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QM100DY-24K |
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| Part Number | QM100DY-24K |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • • • • • IC Collector current 100A VCEX Collector-emitter voltage ... ... |
| Features |
lector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 100 100 800 5 1000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A °C °C V N ·m kg ·cm N ·m kg ·cm g — Mounting torque Mounting s... |
| Document |
 QM100DY-24K Data Sheet
PDF 101.67KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE NON-INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE |
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