PBSS5540Z PNP medium power transistor

PBSS5540Z PNP medium power transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. MARKING TYPE NUMBER PBSS5540Z MARKING CODE PB5540 handbook, halfpage 4 2, 4 1 1 Top view 2 3 MAM288 3 Fig.1 Simplified outline (SOT223) and symbol. 2001 Sep 21 2 NXP Semiconductors 40 V low VC.

Features

• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat generation. APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp drivers)
• MOSFET driver applications. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat emitter-collector voltage collector current (DC) peak collector current equivalent on-resistance MAX −40 −5 −10 <80 UNIT V A A mΩ PINNING PIN 1 base 2 collector 3 emitter 4 colle.