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RA20H8087M
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RA20H8087M 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

Document Datasheet DataSheet (77.76KB)

RA20H8087M 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

Features


• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
• Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 806-825/ 851-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S ORDERING INFORMATION: ORDER NUMBER RA20H8087M-.

RA20H8087M RA20H8087M RA20H8087M
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