MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF493S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device D.
down Voltage (IC =
–10 mAdc, IE = 0) Emitter
– Base Breakdown Voltage (IE =
–100 mAdc, IC = 0) Collector Cutoff Current (VCB =
–200 Vdc, IE = 0) Emitter Cutoff Current (VEB =
–3.0 Vdc) Collector Cutoff Current (VCE =
–10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO
–300
–300
–5.0 — — — — — —
–0.25
–20
–250 Vdc Vdc Vdc µAdc nAdc nAdc
v 300 ms; Duty Cycle v 2.0%.
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
PBF493 PBF493S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min M.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | PBF493R |
Motorola |
HIGH VOLTAGE TRANSISTORS | |
2 | PBF493RS |
Motorola Inc |
High Voltage Transistors | |
3 | PBF493S |
Motorola Inc |
High Voltage Transistors | |
4 | PBF-1201 |
DENSEI-LAMBDA |
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc | |
5 | PBF-1201-22 |
DENSEI-LAMBDA |
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc |