PBF259S High Voltage Transistors

PBF259S High Voltage Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF259/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF259 PBF259S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device D.

Features

down Voltage (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO 300 300 5.0 — — — — — — 50 20 50 Vdc Vdc Vdc nAdc nAdc nAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 PBF259 PBF259S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CH.