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RFP50N06 |
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| Part Number | RFP50N06 |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet September 2013 RFP50N06 N-Channel Power MOSFET 60V, 50A, 22 mΩ These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approachin... |
| Features |
• 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFP50N06 Rev. C0 RFP50N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Vo... |
| Document |
 RFP50N06 Data Sheet
PDF 1.21MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Intersil Corporation |
N-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET |
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Intersil Corporation |
N-Channel MOSFET |
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Intersil Corporation |
N-Channel MOSFET |
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Harris |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
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ON Semiconductor |
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INCHANGE |
N-Channel MOSFET |
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Intersil Corporation |
N-Channel MOSFET |
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GE Solid State |
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GE Solid State |
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