Document | DataSheet (75.05KB) |
RFP14N06 Data Sheet July 1999 File Number 4002.3 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in .
• 14A, 60V
• rDS(ON) = 0.100Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFP14N06 PACKAGE TO-220AB BRAND RFP14N06
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
4-492
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures PSPICE® is a registered trademark of MicroSim .
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | RFP14N05 |
Fairchild Semiconductor |
14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs | |
2 | RFP14N05 |
HARRIS |
Avalanche Rated N-Channel Enhancement-Mode Power MOSFET | |
3 | RFP14N05L |
Fairchild Semiconductor |
14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs | |
4 | RFP14N05L |
Intersil Corporation |
14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs | |
5 | RFP14N06L |
Intersil Corporation |
14A/ 60V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs |