RFM10N45 |
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| Part Number | RFM10N45 |
| Manufacturer | Intersil Corporation |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers ... |
| Features |
• 10A, 450V and 500V • rDS(ON) = 0.600Ω [ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFM10N45 RFM10N50 PACKAGE TO-204AA TO-204AA BRAND RFM10N45 RFM10N50 NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Han... |
| Document |
 RFM10N45 Data Sheet
PDF 31.32KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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GE Solid State |
(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
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GE Solid State |
(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
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Intersil Corporation |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
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GE Solid State |
(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
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GE Solid State |
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
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GE Solid State |
(RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
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GE Solid State |
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
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HOPERF |
single-chip OOK transmitters |
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HOPERF |
single-chip OOK transmitters |
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HOPERF |
single-chip (G)FSK/OOK transmitters |
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