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The RF2377 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction B.
of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2.70 .10 MAX. 4 GENERAL PURPOSE AMPLIFIERS TEXT* 1.90 3.00 2.60 1.30 1.00 .90 .70 9° 1° All dimensions in mm. .25 .10 .37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOT23-6 GaAs HBT SiGe HBT GaAs MESFET Si .
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