logo
Search by part number and manufacturer or description

PA2423L Datasheet

Download Datasheet
PA2423L File Size : 367.62KB

PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier out.

Features

an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423L operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L
  – and its exposed-die-pad package, soldered to the system PCB
  – provide high thermal conductivity and a subsequently low .

PA2423L PA2423L PA2423L

Similar Product

No. Part # Manufacture Description Datasheet
1 PA2423
SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Datasheet
2 PA2423
SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Datasheet
3 PA2423
SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Datasheet
4 PA2423G
SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Datasheet
5 PA2423MB
SiGe Semiconductor Inc.
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Datasheet
More datasheet from SiGe Semiconductor Inc.
Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)