A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier out.
an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423L operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L
– and its exposed-die-pad package, soldered to the system PCB
– provide high thermal conductivity and a subsequently low .
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | PA2423 |
SiGe Semiconductor Inc. |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information | |
2 | PA2423 |
SiGe Semiconductor Inc. |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | |
3 | PA2423 |
SiGe Semiconductor Inc. |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | |
4 | PA2423G |
SiGe Semiconductor Inc. |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | |
5 | PA2423MB |
SiGe Semiconductor Inc. |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information |