SML10S75 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML10S75 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML10S75 D3PAK Package Outline. Dimensions in mm (inches) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532) 1.04 (0.041) 1.15 (0.045) 13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08.

Features

(Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
  – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 100 75 300 ±20 ±30 300 2.4
  –55 to 150 300 75 30 1500 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited .