Search by part number and manufacturer or description
TH50VSF3680 |
|
Click to view a larger image
| Part Number | TH50VSF3680 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory co... |
| Features |
• • • Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes Organization CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 4,194,304 words of 16 bits 4,194,304 words of 16 bits 8,388,608 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits • • • • • • • Function mode control for flash memory Compati... |
| Document |
 TH50VSF3680 Data Sheet
PDF 585.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
|
|
|
|
Toshiba Semiconductor |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
|
|
|
|
Toshiba Semiconductor |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
|
|
|
|
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
|
|
|
|
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
|
|
|
|
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
|
|
|
|
Toshiba Semiconductor |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
|
|
|
|
Panasonic |
HOUR METER |
|
|
|
|
Panasonic |
HOUR METER |
|
|
|
|
Panasonic |
HOUR METER |
|