FQP7N20L |
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Part Number | FQP7N20L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
Features |
• • • • • • • 6.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 6.8 nC) Low Crss ( typical 8.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP7N20L 200 6.5 4.11 26 ± 20 (Note 2) (Note 1)... |
Document |
FQP7N20L Data Sheet
PDF 558.63KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Fairchild Semiconductor |
200V N-Channel MOSFET |
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Fairchild Semiconductor |
100V N-Channel MOSFET |
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100V LOGIC N-Channel MOSFET |
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400V N-Channel MOSFET |
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600V N-Channel MOSFET |
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OuCan |
7A N-Channel MOSFET |
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HAOHAI |
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Oucan Semi |
7A N-Channel MOSFET |
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650V N-Channel MOSFET |
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Oucan Semi |
7A N-Channel MOSFET |
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