FDT3612 100V N-Channel PowerTrench MOSFET

FDT3612 100V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The r.

Features

• 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14nC typ)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a widely used surface mount package Applications
• DC/DC converter
• Motor driving D D D D S D SOT-223 S G G D S SOT-223 * (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 100 ±20 (.