Document | DataSheet (169.76KB) |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 14 A, 30 V RDS(ON) = 9 mΩ @ VGS .
• 14 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
•
•
• DC/DC converter Power management Load switch
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | FDS7096N |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
2 | FDS7098N3 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
3 | FDS7060N7 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
4 | FDS7064A |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
5 | FDS7064N |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET |