FDS6678A 30V N-Channel PowerTrench MOSFET

FDS6678A 30V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ V.

Features

• 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V Applications
• DC/DC converter
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 7.5 40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (N.