This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ V.
• 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V
Applications
• DC/DC converter
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
7.5 40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (N.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
3 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS6672A |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET | |
7 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
8 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDS6673BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
10 | FDS6675 |
Fairchild Semiconductor |
Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
11 | FDS6675 |
ON Semiconductor |
P-Channel MOSFET | |
12 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET | |
13 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET | |
14 | FDS6675BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
15 | FDS6676 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET |