FDS4501H Complementary PowerTrench Half-Bridge MOSFET

FDS4501H Complementary PowerTrench Half-Bridge MOSFET

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V G.

Features

• Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V
• Q2: P-Channel
  –5.6A,
  –20V RDS(on) = 46 mΩ @ V GS =
  –4.5V RDS(on) = 63 mΩ @ V GS =
  –2.5V Applications
• DC/DC converter
• Power management
• Load switch
• Battery protection D D D D D D DD Q2 5 6 Q1 4 3 2 1 SO-8 SO-8 S S S G 7 8 2 G S2 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Parameter - Continuous - Pulsed Power Dissipation for Single Operation G S1 1 Q1 30 (Note 1a) Q2
  –20 ±8
  –5.6
  –20 2.5 1.