FDS2170N7 Datasheet

FDS2170N7 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. .

Features

• 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications
• Synchronous rectifier
• DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units.