FDR8305N N-Channel MOSFET

FDR8305N N-Channel MOSFET

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS.

Features

• 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.
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• Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8. Applications
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• Load switch Motor driving Power Management D2 D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT -8 TM G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed .