FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode

FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode

The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
•
  –3.3 A,
  –20V RDS(ON) = 125 mΩ @ VGS =
  –10 V RDS(ON) = 200 mΩ @ VGS =
  –4.5 V
• VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility D C C D A 1 A 2 G 8 C 7 C 6 D 5 D S 3 G 4 SO-8 Pin 1 S A A Absolute Maximum Ratings Symbol VDSS VGSS .