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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and cur.
rDS(ON) = 15mΩ, VGS = 10V, ID = 35A rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and current handling capability Application DC / DC Converters RoHS Compliant D G S D-PAK (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semicon.
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