FDD6690A |
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| Part Number | FDD6690A |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge fo... |
| Features |
• 46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Speed • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range Ratings 30 ±20 46 12 10... |
| Document |
 FDD6690A Data Sheet
PDF 259.83KB |
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