FDD2612 |
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Part Number | FDD2612 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
Features |
• 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching speed • Low gate charge (8nC typical) Applications • DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W 4.9 10 42 3.8 1.6 −55 to +175 (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Tem... |
Datasheet |
FDD2612 Data Sheet
PDF 110.96KB |
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