FDD2612 Fairchild Semiconductor 200V N-Channel PowerTrench MOSFET

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FDD2612

Fairchild Semiconductor
FDD2612
FDD2612 FDD2612
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Part Number FDD2612
Manufacturer Fairchild Semiconductor
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for...
Features
• 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical) Applications
• DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W 4.9 10 42 3.8 1.6 −55 to +175 (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Tem...

Datasheet Datasheet FDD2612 Data Sheet
PDF 110.96KB


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