FDD16AN08A0 N-Channel MOSFET

FDD16AN08A0 N-Channel MOSFET

FDD16AN08A0 — N-Channel PowerTrench® MOSFET November 2013 FDD16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 50 A, 16 mΩ Features • RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 31 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repet.

Features

• RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
• QG(tot) = 31 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse) Applications
• Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies Formerly developmental type 82660 D D G S D-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 79oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, wi.