FDC6420C 20V N & P-Channel PowerTrench MOSFETs

FDC6420C 20V N & P-Channel PowerTrench MOSFETs

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very s.

Features

• Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Q2
  –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS =
  –4.5 V RDS(ON) = 190 mΩ @ VGS =
  –2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON).
• SuperSOT
  –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications
•
•
• DC/DC converter Load switch LCD display inverter D2 S1 D1 Q2(P) 4 G2 3 2 1 Q1(N) 5 6 SuperSOT Pin 1 TM -6 S2 G1 SuperSOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous .