FDC640P Datasheet

FDC640P P-Channel MOSFET

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = .

Features

• -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V
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• Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications
• Load switch
• Battery protection
• Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -2.