FDB6676 N-Channel MOSFET

FDB6676 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) . Features • 42 A, .

Features

• 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low RDS(ON)
• 175°C maximum junction temperature rating Applications
• Synchronous rectifier
• DC/DC converter . D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A .