FDB6035L |
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| Part Number | FDB6035L |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T C = 25°C unless otherwise noted
FDP6035L 30 ±20 58 175 75 0.5 -65 to 175
FDB6035L
Units V V A
Maximum Power Dissipation @ TC = 25°C Derate above 25°C
W W/°C °C
TJ,TSTG RθJC RθJA
Operating and Storage Temperatu... |
| Datasheet |
 FDB6035L Data Sheet
PDF 413.49KB |
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