Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 i.
· Adoption of FBET process.
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
· Common source.
Package Dimensions
unit:mm 2070
[FC11]
Electrical Connection
G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltag.
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