The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantag.
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• 10 year data retention at 85° C
• Unlimited read/write cycles
• NoDelay™ write
• Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots SRAM & EEPROM Compatible
• JEDEC 32Kx8 SRAM & EEPROM pinout
• 70 ns access time
• 130 ns cycle time
• Equal access & cycle time for reads and writes Low Power Operation
• 2.7V to 3.6V.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | FM18L08-70-P |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory | |
2 | FM18L08-70-S |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory | |
3 | FM180 |
Rectron |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
4 | FM180 |
Formosa MS |
Silicon epitaxial planer type | |
5 | FM180-M |
Formosa MS |
Silicon epitaxial planer type |