FJV4102R PNP Epitaxial Silicon Transistor

FJV4102R PNP Epitaxial Silicon Transistor

FJV4102R FJV4102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV3102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking R1 B R2 C R 72 PNP Ep.

Features

Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -10mA 7 0.9 10 1 -0.5 -3 13 1.1 200 5.5 30 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV4102R Typical Characteristics 1000 -100 VCE = - 5V R1 = 10 K R2 = 10 K VCE = - 0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN -10 100 -1 10 -1 -10 -100 -10.