FJV3109R NPN Epitaxial Silicon Transistor

FJV3109R NPN Epitaxial Silicon Transistor

FJV3109R FJV3109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJV4109R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R29 B R NPN Epitaxial Silicon.

Features

IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 3.2 3.70 250 4.7 6.2 100 Min. 40 40 0.1 600 0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV3109R Typical Characteristics 10000 1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = 5V R = 4.7K IC = 10IB R = 4.7K hFE, DC CURRENT GAIN 1000 100 100 10 10 0.1 1 1 10 100 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 350 PC[mW], POWER DISSIPATION .