FJU1615 PNP Epitaxial Silicon Transistor

FJU1615 PNP Epitaxial Silicon Transistor

FJU1615 FJU1615 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VE.

Features

ime Fall Time Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IC=-100µA, IC=0 VCB=-20V, IE=0 VEB=-7V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A IC=-4A, IB=-0.05A IC=-4A, IB=-0.05A VCE=-5V, IC=-1.5A VCB=-10V, IE=0, f=1MHz IC=-5A, IB1=-IB2=-0.125A RL=2Ω, VCC=-10V 200 160 -0.17 -0.9 180 220 80 300 60 Min. -30 -20 -7 -1.0 -1.0 600 -0.25 -1.2 V V MHz pF ns ns ns Typ. Max. Units V V V µA µA * Pulse Test : PW ≤ 350µs,Duty Cycle ≤ 2% hFE1 Classification Classification hFE1 L 200 ~ 400 K 300 ~ 600 © 2001 Fairchild Semiconductor Corporation Rev. A. February 2001 FJU1615 Typical Characteristics -20 -15.