FJNS3207R NPN Epitaxial Silicon Transistor

FJNS3207R NPN Epitaxial Silicon Transistor

FJNS3207R FJNS3207R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJNS4207R 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Rat.

Features

e Input Resistor Resistor Ratio Test Condition IC=10µΑ, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA 15 0.42 22 0.47 0.4 2.5 29 0.52 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS3207R Typical Characteristics 1000 VCE = 5V R1 = 22K R2 = 47K 100 VCE = 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 10 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[m.