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FGH50N3 |
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| Part Number | FGH50N3 |
| Manufacturer | Fairchild Semiconductor |
| Description | The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state co... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485
Features
• Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max • Low EOFF . . . . . . . . . . . . ... |
| Document |
 FGH50N3 Data Sheet
PDF 183.86KB |
| Distributor | Stock | Price | Buy |
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