3SK254 |
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| Part Number | 3SK254 |
| Manufacturer | NEC |
| Description | DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use • Driving Battery : (VDS =... |
| Features |
• Low VDD Use • Driving Battery : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) Embossed Type Taping 4 Pins Super Mini Mold • Suitable for use as RF amplifier in CATV tuner. 2.0±0.2 1.25 PACKAGE DIMENSIONS (Unit: mm) 2.1±0.2 0.3 +0.1 –0.05 0.3 +0.1 –0.05 3 4 • Low Noise Figure : 1.25±0.1 2 • Automatically Mounting : • Small Package : 0.65 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current... |
| Document |
 3SK254 Data Sheet
PDF 55.65KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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NEC |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
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NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
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NEC |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba |
Silicon N-Channel Transistor |
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