30JL2C41 HIGH EFFICIENCY DIODE STACK

30JL2C41 HIGH EFFICIENCY DIODE STACK

30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A z Ultra Fast Reverse-Recovery Time : t.

Features

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery time Forward Recovery time Thermal Resistance VFM IRRM trr tfr Rth (j−c) IFM = .