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2SK522 |
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| Part Number | 2SK522 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25°C) Item Gate to dra... |
| Features |
f) y fs Ciss Crss PG NF
VDS = 5 V, VGS = 0, f = 100 MHz
1. The 2SK522 is grouped by I DSS as follows.
2
2SK522
Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (mW) 300 Drain Current ID (mA) Typical Output Characteristics (1) 10 VGS = 0 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 Pc h = 20 200 0 m W 100 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 15 Typical Transfer Characteristics VDS = 5 V 10 F E... |
| Document |
 2SK522 Data Sheet
PDF 36.95KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Hitachi |
Silicon N-Channel FET |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET Transistor |
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Toshiba Semiconductor |
N-Channel MOSFET |
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INCHANGE |
N-Channel MOSFET Transistor |
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INCHANGE |
N-Channel MOSFET Transistor |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET |
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Toshiba |
Transistor |
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INCHANGE |
N-Channel MOSFET Transistor |
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NEC |
N-Channel MOSFET |
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