2SK3472 N-Channel MOSFET

2SK3472 N-Channel MOSFET

2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3472 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V.

Features

bol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-04 2SK3472 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON re.