2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.8 Ω (typ.) :.
nce, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) 1 2002-01-25 2SK3342 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage curren.
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Fuji Electric |
N-Channel MOSFET |
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Fuji Electric |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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NEC |
N-Channel MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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NEC |
N-Channel MOSFET |
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NEC |
N-Channel MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor |
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Toshiba Semiconductor |
N-Channel MOSFET |
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