2SK3159 |
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| Part Number | 2SK3159 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain ... |
| Features |
• Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO –3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3159 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 50 200 50 50 187 125 150 –55 to +150 Unit V V A A A A mJ W °C ... |
| Datasheet |
 2SK3159 Data Sheet
PDF 27.24KB |
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