2SK3109 N-Channel MOSFET

2SK3109 N-Channel MOSFET

The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES • Gate .

Features

a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to source voltage (VGS = 0 V) Gate to source voltage (.