Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±3 ±6 22.5 35 2 150 −55 to +150 Unit V.
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No. | Part # | Manufacture | Description | Datasheet |
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Kesailun Elctronic |
Silicon N Channel Junction FETs |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET |
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Sony Corporation |
N-Channel Silicon MOSFET |
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Hitachi Semiconductor |
Silicon N Channel MOS FET |
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Renesas Technology |
Silicon N Channel MOS FET |
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Hitachi Semiconductor |
GaAs HEMT Low Noise Amplifier |
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Sanken |
MOSFET |
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INCHANGE |
N-Channel MOSFET |
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